onsemi UltraFET Type N-Channel MOSFET, 56 A, 100 V Enhancement, 3-Pin TO-220 HUF75639P3
- N° de stock RS:
- 329-1013
- Référence fabricant:
- HUF75639P3
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 unité)*
3,02 €
(TVA exclue)
3,65 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 72 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 273 unité(s) expédiée(s) à partir du 06 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 3,02 € |
| 10 + | 2,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 329-1013
- Référence fabricant:
- HUF75639P3
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | UltraFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Width | 4.83 mm | |
| Height | 9.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series UltraFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Width 4.83 mm | ||
Height 9.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Non conforme
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
- onsemi UltraFET N-Channel MOSFET 100 V, 3-Pin TO-220AB HUF75639P3
- onsemi UltraFET N-Channel MOSFET 100 V, 3-Pin TO-220AB HUF76633P3_F085
- onsemi UltraFET N-Channel MOSFET 60 V, 3-Pin TO-220AB HUF76423P3
- onsemi UltraFET N-Channel MOSFET 80 V, 3-Pin TO-220AB HUF75645P3
- onsemi UltraFET N-Channel MOSFET 55 V, 3-Pin TO-220AB HUF75344P3
- onsemi UltraFET N-Channel MOSFET 55 V, 3-Pin TO-220AB HUF75345P3
- onsemi UltraFET N-Channel MOSFET 55 V, 3-Pin TO-220AB HUF75545P3
- onsemi UltraFET N-Channel MOSFET 55 V, 3-Pin TO-220AB HUF75321P3