Infineon CoolMOSTMPFD7 MOSFET, 16 A, 650 V Enhancement, 3-Pin PG-TO-220
- N° de stock RS:
- 273-7461
- Référence fabricant:
- IPAN60R210PFD7SXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
3,77 €
(TVA exclue)
4,562 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 500 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 1,885 € | 3,77 € |
| 10 - 18 | 1,58 € | 3,16 € |
| 20 - 98 | 1,55 € | 3,10 € |
| 100 - 248 | 1,26 € | 2,52 € |
| 250 + | 1,16 € | 2,32 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-7461
- Référence fabricant:
- IPAN60R210PFD7SXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOSTMPFD7 | |
| Package Type | PG-TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 25W | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOSTMPFD7 | ||
Package Type PG-TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 25W | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET offers Cool MOS revolutionary technology for high voltage power MOSFETs. It is designed according to the super junction principle and pioneered by Infineon Technologies. The latest Cool MOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor drive, lighting, etc. The new series provides all the benefits of a fast switching Super junction MOSFET, combined with an excellent price to performance ratio and state of the art ease of use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
Fast body diode
Extremely low losses
Low switching losses Eoss
Excellent thermal behaviour
Excellent commutation ruggedness
Liens connexes
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