Infineon IGLT65 Type N-Channel MOSFET, 31 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R055D2ATMA1
- N° de stock RS:
- 351-886
- Référence fabricant:
- IGLT65R055D2ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
6,46 €
(TVA exclue)
7,82 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 février 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,46 € |
| 10 - 99 | 5,81 € |
| 100 - 499 | 5,34 € |
| 500 - 999 | 4,97 € |
| 1000 + | 4,45 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 351-886
- Référence fabricant:
- IGLT65R055D2ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HDSOP-16 | |
| Series | IGLT65 | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 0.066Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 102W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HDSOP-16 | ||
Series IGLT65 | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 0.066Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 102W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
Infineon IGLT65 Series MOSFET, 650V Drain Source Voltage, 31A Continuous Drain Current - IGLT65R055D2ATMA1
This MOSFET is a high-voltage, N-channel switching transistor designed for industrial applications where a robust thermal range and surface-mount assembly are required. It operates as an enhancement-mode device and is supplied in a compact PG-HDSOP-16 surface package suitable for automated PCB assembly. Conformance to JEDEC standards makes it appropriate for demanding industrial environments that require extended temperature tolerance.
Features and Benefits:
• 650V drain-source rating supports high-voltage switching systems
• 31A continuous drain current enables substantial load handling
• 0.066Ω Rds(on) reduces conduction losses in power stages
• 102W power dissipation allows higher thermal throughput
• 4.7nC typical gate charge improves switching efficiency
• 10V gate-source limit permits standard gate drive voltages
• 31A continuous drain current enables substantial load handling
• 0.066Ω Rds(on) reduces conduction losses in power stages
• 102W power dissipation allows higher thermal throughput
• 4.7nC typical gate charge improves switching efficiency
• 10V gate-source limit permits standard gate drive voltages
Applications
• Suitable for high-voltage power converters and inverters
• Used with industrial motor-drive switching modules
• Ideal for switched-mode power supplies in factory equipment
• Can be used for clamp and snubber circuits in power racks
• Used for high-voltage relay replacement in control panels
• Used with industrial motor-drive switching modules
• Ideal for switched-mode power supplies in factory equipment
• Can be used for clamp and snubber circuits in power racks
• Used for high-voltage relay replacement in control panels
What temperature extremes can it withstand in operation?
It is specified to function across a wide span from -55°C up to 150°C, permitting use in harsh industrial thermal conditions.
What pin count and mounting style should be considered for PCB layout?
The device uses a 16-pin package in a surface-mount PG-HDSOP-16 format, suitable for standard SMT assembly processes.
How does the gate specification influence driver selection?
The maximum permissible gate-source voltage is 10V, so gate drivers should be chosen to remain within that voltage to avoid overstress.
Does it follow automotive standards for vehicle use?
It is not certified to automotive standards and is intended for industrial JEDEC-compliant applications.
Liens connexes
- Infineon IGLT65 Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R110D2ATMA1
- Infineon IGLT65 Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R045D2ATMA1
- Infineon IGLT65 Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R035D2ATMA1
- Infineon IGLT65 Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R025D2AUMA1
- Infineon IMLT65 Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R026M2HXTMA1
- Infineon IMLT65 Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R033M2HXTMA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R020M2HXTMA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R015M2HXTMA1
