Infineon CoolMOSTM P7 MOSFET, 18 A, 600 V Enhancement, 3-Pin PG-TO-220
- N° de stock RS:
- 273-7459
- Référence fabricant:
- IPAN60R180P7SXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
4,03 €
(TVA exclue)
4,876 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 432 unité(s) expédiée(s) à partir du 16 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 2,015 € | 4,03 € |
| 10 - 18 | 1,685 € | 3,37 € |
| 20 - 98 | 1,65 € | 3,30 € |
| 100 - 248 | 1,32 € | 2,64 € |
| 250 + | 1,28 € | 2,56 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-7459
- Référence fabricant:
- IPAN60R180P7SXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-TO-220 | |
| Series | CoolMOSTM P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.18Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 26W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-TO-220 | ||
Series CoolMOSTM P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.18Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 26W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET of Cool MOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. The 600V Cool MOS P7 series is the successor to the Cool MOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, example very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses makes witching applications even more efficient, more compact and much cooler.
Ease of use
Excellent ESD robustness
Simplified thermal management
Significant reduction of switching
Suitable for hard and soft switching
Liens connexes
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- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220