Infineon OptiMOSTM Type N-Channel Power MOSFET, 100 A, 30 V Enhancement, 8-Pin PG-TDSON-8
- N° de stock RS:
- 273-2814
- Référence fabricant:
- ISC011N03L5SATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
8,52 €
(TVA exclue)
10,31 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 80 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,704 € | 8,52 € |
| 50 - 495 | 1,664 € | 8,32 € |
| 500 - 995 | 1,612 € | 8,06 € |
| 1000 - 2495 | 1,572 € | 7,86 € |
| 2500 + | 1,54 € | 7,70 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-2814
- Référence fabricant:
- ISC011N03L5SATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PG-TDSON-8 | |
| Series | OptiMOSTM | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Power Dissipation Pd | 96W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PG-TDSON-8 | ||
Series OptiMOSTM | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Power Dissipation Pd 96W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is a N channel MOSFET and optimized for high performance buck converter. This MOSFET is qualified according to JEDEC standard and halogen free according to IEC61249 2 21.
RoHS compliant
Pb free lead plating
Very low on resistance
Superior thermal resistance
Liens connexes
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