Infineon OptiMOS Type N-Channel MOSFET, 57 A, 650 V Enhancement, 10-Pin PG-HDSOP-10-1 IPDD60R050G7XTMA1
- N° de stock RS:
- 273-2787
- Référence fabricant:
- IPDD60R050G7XTMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 1700 unités)*
6 611,30 €
(TVA exclue)
8 000,20 €
(TVA incluse)
Ajouter 1700 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- Expédition à partir du 19 août 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 1700 + | 3,889 € | 6 611,30 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-2787
- Référence fabricant:
- IPDD60R050G7XTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | OptiMOS | |
| Package Type | PG-HDSOP-10-1 | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series OptiMOS | ||
Package Type PG-HDSOP-10-1 | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is easy to use and has the highest quality standards. It is possibility to increase economies of scales by usage in PFC and PWM topologies in the application. It reducing parasitic source inductance by Kelvin Source improves efficiency by faster switching and ease of use due to less ringing.
Total Pb free
RoHS compliant
Easy visual inspection leads
Improve thermal performance
Suitable for hard and soft switching
Liens connexes
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