Infineon OptiMOS Type N-Channel MOSFET, 503 A, 60 V Enhancement, 16-Pin PG-HDSOP-16-1 IAUTN06S5N008TATMA1

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N° de stock RS:
284-707
Référence fabricant:
IAUTN06S5N008TATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

503A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-HDSOP-16-1

Series

OptiMOS

Mount Type

Surface

Pin Count

16

Maximum Drain Source Resistance Rds

0.79mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

358W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon OptiMOS 5 Automotive Power MOSFET is designed to meet the stringent demands of modern automotive applications, promising high reliability and efficiency. Engineered with Advanced technology, this power transistor provides exceptional performance while optimising thermal characteristics. The robust design ensures operational stability over a wide temperature range, making it an Ideal choice for a variety of automotive applications. Its compliance with industry standards like AEC Q101 signifies its enhanced quality and performance, Ideal for automotive circuits requiring intense current handling. This device encapsulates high efficiency in a Compact package, ensuring reliability through extensive electrical testing and validation.

N channel enhancement mode for efficient switching

Extended qualifications enhance automotive reliability

High thermal resistance for durability under stress

Avalanche tested for robust performance

MSL1 rating supports 260°C Peak reflow

100% electrical characterisation ensures consistency

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