Infineon OptiMOS Type N-Channel MOSFET, 503 A, 60 V Enhancement, 16-Pin PG-HDSOP-16-1 IAUTN06S5N008TATMA1
- N° de stock RS:
- 284-707
- Référence fabricant:
- IAUTN06S5N008TATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
10,64 €
(TVA exclue)
12,88 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 5,32 € | 10,64 € |
| 20 - 198 | 4,79 € | 9,58 € |
| 200 - 998 | 4,415 € | 8,83 € |
| 1000 + | 4,10 € | 8,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-707
- Référence fabricant:
- IAUTN06S5N008TATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 503A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-HDSOP-16-1 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 0.79mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 358W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 503A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-HDSOP-16-1 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 0.79mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 358W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 Automotive Power MOSFET is designed to meet the stringent demands of modern automotive applications, promising high reliability and efficiency. Engineered with Advanced technology, this power transistor provides exceptional performance while optimising thermal characteristics. The robust design ensures operational stability over a wide temperature range, making it an Ideal choice for a variety of automotive applications. Its compliance with industry standards like AEC Q101 signifies its enhanced quality and performance, Ideal for automotive circuits requiring intense current handling. This device encapsulates high efficiency in a Compact package, ensuring reliability through extensive electrical testing and validation.
N channel enhancement mode for efficient switching
Extended qualifications enhance automotive reliability
High thermal resistance for durability under stress
Avalanche tested for robust performance
MSL1 rating supports 260°C Peak reflow
100% electrical characterisation ensures consistency
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