Vishay SIDR N-Channel MOSFET, 227 A, 60 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR626EP-T1-RE3
- N° de stock RS:
- 268-8284
- Référence fabricant:
- SIDR626EP-T1-RE3
- Fabricant:
- Vishay
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 268-8284
- Référence fabricant:
- SIDR626EP-T1-RE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 227A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK SO-8DC | |
| Series | SIDR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00174Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 150W | |
| Typical Gate Charge Qg @ Vgs | 102nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 227A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK SO-8DC | ||
Series SIDR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00174Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 150W | ||
Typical Gate Charge Qg @ Vgs 102nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- TW
The Vishay N channel TrenchFET generation 4 power MOSFET has TOP side cooling feature provides additional venue for thermal transfer. It is used in applications such as synchronous rectification, motor drive switch, battery and load switch.
Tuned for the lowest figure of merit
ROHS compliant
UIS tested 100 percent
Liens connexes
- Vishay SIDR N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR626EP-T1-RE3
- Vishay SiD N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8 SIDR626EP-T1-RE3
- Vishay N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR220EP-T1-RE3
- Vishay N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR626LEP-T1-RE3
- Vishay N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC SIDR104AEP-T1-RE3
- Vishay N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR578EP-T1-RE3
- Vishay N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR510EP-T1-RE3
- Vishay N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR5802EP-T1-RE3