ROHM R6077VNZ Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-3PF
- N° de stock RS:
- 265-5424
- Référence fabricant:
- R6077VNZC17
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 300 unités)*
2 095,20 €
(TVA exclue)
2 535,30 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 300 - 300 | 6,984 € | 2 095,20 € |
| 600 - 900 | 6,23 € | 1 869,00 € |
| 1200 + | 5,72 € | 1 716,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 265-5424
- Référence fabricant:
- R6077VNZC17
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-3PF | |
| Series | R6077VNZ | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.051Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 113W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-3PF | ||
Series R6077VNZ | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.051Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 113W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM power MOSFET with a low on resistance and high power package which is suitable for switching circuits, single cell battery applications and mobile applications. It is mounted on a cu board as well as it is halogen free.
Fast reverse recovery time (trr)
Low on resistance
Fast switching speed
Drive circuits can be simple
Halogen free mould compound
Liens connexes
- ROHM R6077VNZ Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-3PF R6077VNZC17
- ROHM R6055VNZ Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-3PF
- ROHM R6055VNZ Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-3PF R6055VNZC17
- ROHM R60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-3PF R6086YNZC17
- ROHM R6020ENZ N-Channel MOSFET 600 V, 3-Pin TO-3PF R6020ENZC8
- ROHM R6030ENZ N-Channel MOSFET 600 V, 3-Pin TO-3PF R6030ENZC8
- ROHM R6024ENZ N-Channel MOSFET 600 V, 3-Pin TO-3PF R6024ENZC8
- ROHM R6050JNZ Type N-Channel MOSFET 600 V N, 3-Pin TO-3PF