Microchip Type P-Channel MOSFET, 0.6 A, 40 V MOSFET, 3-Pin SOT-23

Voir l’ensemble des MOSFETs

Sous-total (1 bobine de 3000 unités)*

1 605,00 €

(TVA exclue)

1 941,00 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
Informations sur le stock actuellement non accessibles
Unité
Prix par unité
la bobine*
3000 +0,535 €1 605,00 €

*Prix donné à titre indicatif

N° de stock RS:
264-8928
Référence fabricant:
TP2104K1-G
Fabricant:
Microchip
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Microchip

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.6A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-23

Mount Type

Through Hole

Pin Count

3

Channel Mode

MOSFET

Maximum Power Dissipation Pd

0.36W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

High input impedance and high gain

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-drain diode

Free from secondary breakdown

Liens connexes