Microchip TP0620 Type P-Channel MOSFET, -175 A, 200 V Enhancement, 3-Pin TO-92

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Sous-total (1 sachet de 1000 unités)*

1 260,00 €

(TVA exclue)

1 520,00 €

(TVA incluse)

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Le Sachet*
1000 +1,26 €1 260,00 €

*Prix donné à titre indicatif

N° de stock RS:
264-8926
Référence fabricant:
TP0620N3-G
Fabricant:
Microchip
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Marque

Microchip

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-175A

Maximum Drain Source Voltage Vds

200V

Series

TP0620

Package Type

TO-92

Mount Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Low threshold (-2.4V max.)

High input impedance

Low input capacitance (85pF typical)

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

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