ROHM RD3P200SN N-Channel MOSFET, 20 A, 100 V Enhancement, 3-Pin TO-252 RD3P200SNTL1
- N° de stock RS:
- 264-3818
- Référence fabricant:
- RD3P200SNTL1
- Fabricant:
- ROHM
Ajoutez 50 de plus pour économiser 10%
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
9,57 €
(TVA exclue)
11,58 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Plus 2 320 unité(s) expédiée(s) à partir du 11 novembre 2026
Unité | Prix par unité | le paquet* | Économie |
|---|---|---|---|
| 5 - 45 | 1,914 € | 9,57 € | - |
| 50 - 95 | 1,716 € | 8,58 € | 10% |
| 100 - 245 | 1,366 € | 6,83 € | 28% |
| 250 - 995 | 1,342 € | 6,71 € | 29% |
| 1000 + | 1,126 € | 5,63 € | 41% |
*Prix donné à titre indicatif
- N° de stock RS:
- 264-3818
- Référence fabricant:
- RD3P200SNTL1
- Fabricant:
- ROHM
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | RD3P200SN | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 46mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Power Dissipation Pd | 20W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series RD3P200SN | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 46mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Power Dissipation Pd 20W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Liens connexes
- ROHM RD3P200SN N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- ROHM RD3P200SN N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 RD3P200SNTL
- ROHM RD3P175SN N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- ROHM RD3P100SN N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- ROHM RD3P050SN N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 RD3P050SNTL1
- ROHM RD3P175SN N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 RD3P175SNTL1
- ROHM RD3P100SN N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 RD3P100SNTL1
- ROHM N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 R6507KND3TL1
