Infineon IPT N-Channel MOSFET, 365 A, 100 V Enhancement, 16-Pin HDSOP IPTC014N10NM5ATMA1
- N° de stock RS:
- 259-2732
- Référence fabricant:
- IPTC014N10NM5ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
5,66 €
(TVA exclue)
6,85 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 1 800 unité(s) expédiée(s) à partir du 16 septembre 2027
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 5,66 € |
| 10 - 24 | 5,16 € |
| 25 - 49 | 4,81 € |
| 50 - 99 | 4,48 € |
| 100 + | 4,14 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 259-2732
- Référence fabricant:
- IPTC014N10NM5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 365A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPT | |
| Package Type | HDSOP | |
| Mount Type | Surface Mount | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 880mV | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 168nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC 61249-2-21 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 365A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPT | ||
Package Type HDSOP | ||
Mount Type Surface Mount | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 880mV | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 168nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC 61249-2-21 | ||
Automotive Standard No | ||
Infineon IPT Series MOSFET, 100V Maximum Drain-Source Voltage, 365A Maximum Continuous Drain Current - IPTC014N10NM5ATMA1
This MOSFET is an enhancement-mode N-channel transistor designed for high-current switching in demanding electronic systems. It operates across a wide ambient range and is packaged for low-profile board mounting, offering substantial power handling for applications requiring robust conduction and thermal endurance.
Features and Benefits:
• Low conduction resistance reduces on-state losses for efficient power transfer
• High continuous drain current enables sustained heavy-current operation
• 375W power dissipation capacity supports high-power switching tasks
• 168nC gate charge balances drive energy and switching dynamics
• Wide operating temperature range allows operation in extreme environments
• High continuous drain current enables sustained heavy-current operation
• 375W power dissipation capacity supports high-power switching tasks
• 168nC gate charge balances drive energy and switching dynamics
• Wide operating temperature range allows operation in extreme environments
Applications
• Suitable for high-current motor drive stages
• Ideal for power-supply output stages and converters
• Used with battery management for high-discharge circuits
• Can be used for industrial inverter switching assemblies
• Ideal for power-supply output stages and converters
• Used with battery management for high-discharge circuits
• Can be used for industrial inverter switching assemblies
What gate voltage tolerance should be observed during operation?
The gate must not exceed a Peak of 20V relative to the source to avoid damage.
How does the device handle thermal stress during continuous operation?
It can dissipate up to 375W provided appropriate board thermal management and cooling are applied.
What resistance performance can be expected for conduction losses?
The on-resistance is specified at 1.4mΩ, which defines low conduction losses under rated conditions.
What temperature extremes can it withstand during storage or use?
It is rated to operate from -55°C up to 175°C, permitting use across a very wide thermal range.
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