Name: Infineon IPT N-Channel MOSFET, 315 A, 100 V Enhancement HSOF IPT015N10NF2SATMA1
Brand: Infineon
SKU: 259-2644
Price: 2.036 EUR
Availability: BackOrder

Unitésélectionner ou taper la quantité

Temporairement en rupture de stock

Expédition à partir du 01 février 2027

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	315A
	Maximum Drain Source Voltage Vds	100V
	Series	IPT
	Package Type	HSOF
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	1.50mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	+175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 315A
	Maximum Drain Source Voltage Vds 100V
	Series IPT
	Package Type HSOF
	Mount Type Surface
	Maximum Drain Source Resistance Rds 1.50mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature +175°C
	Standards/Approvals RoHS
	Automotive Standard No

Infineon IPT Series MOSFET, 100V Drain-Source Voltage, 315A Continuous Drain Current - IPT015N10NF2SATMA1

This MOSFET is a high-power N-channel transistor designed for surface-mount applications where robust switching and wide temperature endurance are required. It operates across an extensive temperature range and is intended for systems demanding substantial continuous current handling while maintaining low conduction losses. The device is supplied in a heat-sinking HSOF package suitable for high-current board-level integration.

Features and Benefits:

• 1.50mΩ Rds(on) enabling reduced conduction losses
• 315A continuous drain current supporting heavy loads
• 100V Vds permitting higher-voltage switching duties
• 1.2V forward voltage improving conduction efficiency
• -55°C to +175°C operational range enabling harsh environments

Applications

• Suitable for high-current motor drive stages
• Ideal for DC-DC converters in power racks
• Used with power distribution assemblies on boards
• Can be used for high-power switching in industrial systems
• Suitable for Compact heat-sinked surface-mount layouts

What package type is used for thermal dissipation?

It is provided in an HSOF package designed for enhanced heat transfer to external sinks.

Which mounting method is recommended for PCB assembly?

The device is intended for surface mounting to enable low-inductance board layout.

What channel conduction type does the device employ?

It uses an enhancement-mode N-channel configuration for controlled switching.

Is the product suitable for automotive standardisation?

It is not specified as meeting automotive standards but conforms to RoHS requirements.

3 664,80 €

(TVA exclue)

2,036 €/unité

Infineon IPT N-Channel MOSFET, 315 A, 100 V Enhancement HSOF IPT015N10NF2SATMA1

Frais de livraison offerts pour toute commande de plus de 90,00 €