Infineon HEXFET Type N-Channel MOSFET, 182 A, 200 V, 3-Pin TO-247AC IRF200P222
- N° de stock RS:
- 258-3959
- Référence fabricant:
- IRF200P222
- Fabricant:
- Infineon
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 258-3959
- Référence fabricant:
- IRF200P222
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 182A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-247AC | |
| Series | HEXFET | |
| Mount Type | Surface, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.6mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 556W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 135nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 182A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-247AC | ||
Series HEXFET | ||
Mount Type Surface, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.6mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 556W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 135nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET StrongIRFET is improved gate, avalanche and dynamic dv/dt ruggedness, it is fully characterized capacitance and avalanche SOA.
Enhanced body diode dv/dt and di/dt capability
Lead-free, RoHS compliant
Liens connexes
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin TO-247AC IRFP048NPBF
- Infineon HEXFET Type N-Channel MOSFET 300 V Enhancement, 3-Pin TO-247AC IRFP4868PBF
- Infineon HEXFET Type N-Channel Power MOSFET 150 V Enhancement, 3-Pin TO-247AC
- Infineon HEXFET Type N-Channel Power MOSFET 75 V Enhancement, 3-Pin TO-247AC IRFP4368PBF
- Infineon HEXFET Type N-Channel Power MOSFET 150 V Enhancement, 3-Pin TO-247AC IRFP4568PBF
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-220
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-263