Références fabricant

Infineon IPD N-Channel MOSFET, 30 A, 60 V N TO-252 IPD220N06L3GATMA1

N° de stock RS:: 258-3836
Référence fabricant:: IPD220N06L3GATMA1
Fabricant:: Infineon

Infineon IPD N-Channel MOSFET, 30 A, 60 V N TO-252 IPD220N06L3GATMA1

Offre groupée disponible

Consulter les options de prix de gros

Sous-total (1 bobine de 2500 unités)*

540,00 €

(TVA exclue)

652,50 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 10 mai 2027

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Unité	Prix par unité	la bobine*
2500 - 2500	0,216 €	540,00 €
5000 +	0,205 €	512,50 €

*Prix donné à titre indicatif

N° de stock RS:: 258-3836
Référence fabricant:: IPD220N06L3GATMA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	60V
	Series	IPD
	Package Type	TO-252
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	39.80mΩ
	Channel Mode	N
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	+175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 60V
	Series IPD
	Package Type TO-252
	Mount Type Surface
	Maximum Drain Source Resistance Rds 39.80mΩ
	Channel Mode N
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature +175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IPD220N06L3GATMA1

Infineon IPD Series MOSFET, 60V Maximum Drain-Source Voltage, 30A Maximum Continuous Drain Current - IPD220N06L3GATMA1

This MOSFET is a surface‑mount N‑channel transistor designed for power switching in demanding thermal environments. It combines a moderate voltage rating with substantial continuous current capability, making it suitable for applications that need efficient conduction and Compact mounting. The device complies with RoHS standards and is offered in a TO‑252 package for straightforward PCB assembly.

Features and Benefits:

• 39.8mΩ RDS(on) delivering reduced conduction losses
• 1.2V forward voltage enabling efficient gate‑driven switching
• -55°C to +175°C operating range supporting wide temperature extremes
• 60V drain-source rating allowing robust voltage headroom
• 30A continuous drain current supporting high‑current loads

Applications

• Suitable for DC power distribution modules
• Ideal for motor driver switching stages
• Used with battery management circuits requiring surface mounting
• Can be used for synchronous rectification in converters
• Suitable for high‑current load switching on Compact PCBs

What package type is provided for PCB assembly?

The device is supplied in a TO‑252 surface‑mount package suited to reflow processes.

Which channel polarity does it employ for control circuits?

It uses an N‑channel configuration for low‑side or high‑side switching topologies depending on circuit design.

Is it intended for automotive qualification?

It is not designated as an automotive‑standard device but meets RoHS environmental requirements.

What mounting style is appropriate for this component?

The transistor is intended for surface mounting to permit low‑profile board layouts.

What is the maximum operating temperature specified?

The component is rated to operate up to +175°C.

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