Infineon IPA Type N-Channel MOSFET, 26 A, 650 V N TO-220 IPAN60R360PFD7SXKSA1
- N° de stock RS:
- 258-3782
- Référence fabricant:
- IPAN60R360PFD7SXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
2,57 €
(TVA exclue)
3,11 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 338 unité(s) expédiée(s) à partir du 26 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 1,285 € | 2,57 € |
| 20 - 48 | 1,175 € | 2,35 € |
| 50 - 98 | 1,09 € | 2,18 € |
| 100 - 198 | 1,015 € | 2,03 € |
| 200 + | 0,935 € | 1,87 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-3782
- Référence fabricant:
- IPAN60R360PFD7SXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | IPA | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series IPA | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The CoolMOS PFD7 super junction MOSFET in a TO-220 FullPAK NL package achieves low switching losses, featuring RDS(on) of 360mOhm. The 600V CoolMOS PFD7 comes with an integrated fast body diode ensuring a robust device and in turn reduced bill-of-material for the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS PFD7 offers improved light- and full-load efficiency over CoolMOS P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.
Excellent commutation ruggedness
Low EMI
Broad package portfolio
BOM cost reduction and easy manufacturing
Robustness and reliability
Easy to select the right parts for design fine-tuning
Liens connexes
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