Infineon IPA Type N-Channel MOSFET, 66 A, 650 V N TO-220

The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The MOSFET in a TO-220 FullPAK narrow-lead package features RDS(on) of 125mOhm leading to low switching losses. The products come with a fast body diode ensuring a robust device and in turn reduced bill-of-material for the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS PFD7 offers improved light- and full-load efficiency over CoolMOS P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Wide range of RDS(on) values