Infineon IAUC Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TDSON IAUC100N04S6N022ATMA1
- N° de stock RS:
- 258-0910
- Référence fabricant:
- IAUC100N04S6N022ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
6,86 €
(TVA exclue)
8,30 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 14 940 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,372 € | 6,86 € |
| 50 - 120 | 1,138 € | 5,69 € |
| 125 - 245 | 1,058 € | 5,29 € |
| 250 - 495 | 0,988 € | 4,94 € |
| 500 + | 0,918 € | 4,59 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-0910
- Référence fabricant:
- IAUC100N04S6N022ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IAUC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Power Dissipation Pd | 75W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IAUC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Power Dissipation Pd 75W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS 6 40V power MOS technology in the 5x6mm² SS08 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products which enables the customer to find the best product fit in the their applications. All of this enables the best-in-class product FOM and performance on the market. The new SS08 product offers 120A continuous current ratings, which is >25% higher than the standard DPAK at almost half of its footprint area.
N-channel - Enhancement mode - normal LevelAEC Q101 qualified
MSL1 up to 260°C peak reflow
Green Product (RoHS compliant)
100% Avalanche tested
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