Vishay SI3483DDV Type P-Channel MOSFET, -6.4 A, -30 V, 6-Pin TSOP-6 SI3483DDV-T1-GE3
- N° de stock RS:
- 256-7358
- Référence fabricant:
- SI3483DDV-T1-GE3
- Fabricant:
- Vishay
Sous-total (1 bobine de 3000 unités)*
615,00 €
(TVA exclue)
744,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Expédition à partir du 25 janvier 2027
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,205 € | 615,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 256-7358
- Référence fabricant:
- SI3483DDV-T1-GE3
- Fabricant:
- Vishay
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -6.4A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | TSOP-6 | |
| Series | SI3483DDV | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.0513Ω | |
| Maximum Power Dissipation Pd | 3W | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +150°C | |
| Height | 1.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -6.4A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type TSOP-6 | ||
Series SI3483DDV | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.0513Ω | ||
Maximum Power Dissipation Pd 3W | ||
Maximum Gate Source Voltage Vgs 16V | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +150°C | ||
Height 1.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SI3483DDV Series MOSFET, 3W Maximum Power Dissipation, -30V Maximum Drain Source Voltage - SI3483DDV-T1-GE3
Features and Benefits:
• Maximum continuous drain current -6.4A supports moderate load currents
• Drain-source voltage rating -30V permits low-voltage switching
• Gate threshold allowing Vgs up to 16V provides flexible drive range
• Typical gate charge 4.5nC yields faster switching for efficiency
• Power dissipation 3W limits thermal load for compact designs
Applications
• Suitable for load switching in power-distribution rails
• Ideal for high-side switching in battery-management systems
• Can be used for USB power-path selection circuits
• Used with motor-driver gates in low-voltage systems
What thermal extremes can the device tolerate in operation?
How many pins and what mounting style does it use?
What channel type and conduction polarity should be expected?
Is this suited to automotive standard requirements?
Liens connexes
- Vishay SI3483DDV Type P-Channel MOSFET -30 V, 6-Pin TSOP-6 SI3483DDV-T1-GE3
- Vishay Type P-Channel MOSFET 20 V, 6-Pin TSOP-6 SI3443DDV-T1-GE3
- Vishay Type P-Channel MOSFET 20 V, 6-Pin TSOP-6 SI3460DDV-T1-GE3
- Vishay Type P-Channel MOSFET 40 V, 6-Pin TSOP-6 SI3438DV-T1-GE3
- Vishay SI3437DV Type P-Channel MOSFET -150 V, 6-Pin TSOP-6 SI3437DV-T1-GE3
- Vishay Si3433CDV Type P-Channel MOSFET 20 V Enhancement, 6-Pin TSOP SI3433CDV-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 6-Pin TSOP SI3421DV-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 12 V Enhancement, 6-Pin TSOP SI3477DV-T1-GE3
