Vishay SI3483DDV Type P-Channel MOSFET, -6.4 A, -30 V, 6-Pin TSOP-6 SI3483DDV-T1-GE3
- N° de stock RS:
- 256-7358
- Référence fabricant:
- SI3483DDV-T1-GE3
- Fabricant:
- Vishay
Sous-total (1 bobine de 3000 unités)*
615,00 €
(TVA exclue)
744,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Expédition à partir du 14 décembre 2026
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,205 € | 615,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 256-7358
- Référence fabricant:
- SI3483DDV-T1-GE3
- Fabricant:
- Vishay
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -6.4A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | TSOP-6 | |
| Series | SI3483DDV | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.0513Ω | |
| Maximum Power Dissipation Pd | 3W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -6.4A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type TSOP-6 | ||
Series SI3483DDV | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.0513Ω | ||
Maximum Power Dissipation Pd 3W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16V | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 1.1mm | ||
Automotive Standard No | ||
Vishay SI3483DDV Series MOSFET, 3W Maximum Power Dissipation, -30V Maximum Drain Source Voltage - SI3483DDV-T1-GE3
Features and Benefits:
• Maximum continuous drain current -6.4A supports moderate load currents
• Drain-source voltage rating -30V permits low-voltage switching
• Gate threshold allowing Vgs up to 16V provides flexible drive range
• Typical gate charge 4.5nC yields faster switching for efficiency
• Power dissipation 3W limits thermal load for compact designs
Applications
• Suitable for load switching in power-distribution rails
• Ideal for high-side switching in battery-management systems
• Can be used for USB power-path selection circuits
• Used with motor-driver gates in low-voltage systems
What thermal extremes can the device tolerate in operation?
How many pins and what mounting style does it use?
What channel type and conduction polarity should be expected?
Is this suited to automotive standard requirements?
Liens connexes
- Vishay Type P-Channel MOSFET 30 V, 6-Pin TSOP-6 SI3483DDV-T1-GE3
- Vishay Type P-Channel MOSFET 150 V, 6-Pin TSOP-6
- Vishay Type P-Channel MOSFET 20 V, 6-Pin TSOP-6
- Vishay Type P-Channel MOSFET 20 V, 6-Pin TSOP-6
- Vishay Type P-Channel MOSFET 40 V, 6-Pin TSOP-6
- Vishay Si3433CDV Type P-Channel MOSFET 20 V Enhancement, 6-Pin TSOP
- Vishay Type P-Channel MOSFET 20 V, 6-Pin TSOP-6 SI3443DDV-T1-GE3
- Vishay Type P-Channel MOSFET 150 V, 6-Pin TSOP-6 SI3437DV-T1-GE3
