Vishay SI3483DDV Type P-Channel MOSFET, -6.4 A, -30 V, 6-Pin TSOP-6
- N° de stock RS:
- 256-7358
- Référence fabricant:
- SI3483DDV-T1-GE3
- Fabricant:
- Vishay
Sous-total (1 bobine de 3000 unités)*
534,00 €
(TVA exclue)
645,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 02 novembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,178 € | 534,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 256-7358
- Référence fabricant:
- SI3483DDV-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -6.4A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | TSOP-6 | |
| Series | SI3483DDV | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.0513Ω | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Maximum Power Dissipation Pd | 3W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | +150°C | |
| Height | 1.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -6.4A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type TSOP-6 | ||
Series SI3483DDV | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.0513Ω | ||
Maximum Gate Source Voltage Vgs 16V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Maximum Power Dissipation Pd 3W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature +150°C | ||
Height 1.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SI3483DDV Series MOSFET, -30V Maximum Drain Source Voltage, 0.0513Ω Maximum Drain Source Resistance - SI3483DDV-T1-GE3
This p-channel MOSFET is a surface-mount semiconductor device designed to control high-side switching and analogue power functions in Compact electronic systems. It operates with a 30V drain-to-source rating and is intended for use across a broad ambient temperature range, making it suitable for demanding industrial and automation environments where Compact power switching is required.
Features and Benefits:
• Low Rds(on) 0.0513Ω enabling reduced conduction losses • Continuous drain current 6.4A supporting moderate power loads • Typical gate charge 4.5nC permitting Faster gate switching • Maximum power dissipation 3W allowing sustained thermal load • Gate-source withstand 16V for tolerant gate-drive margins • Operable between -55°C and +150°C for high-temperature use
Applications
• Suitable for high-side load switching in automation equipment • Ideal for battery management circuits in portable systems • Used for analogue power control in industrial electronics • Can be used for thermally sensitive needing Compact SMD parts • Used with motor-control drivers requiring P-channel topology
What package type is used for Compact PCB layouts?
It is supplied in a TSOP-6 surface-mount package with six pins for tight board real estate.
How does the device behave under high junction temperatures?
It is rated to operate up to +150°C, allowing continued conduction and switching at elevated temperatures within specified limits.
What is the typical switching load characteristic to consider in drive design?
Typical gate charge is 4.5nC, which informs gate-drive energy and switching-loss calculations.
Which environmental approvals or material standards apply?
The component conforms to RoHS material restrictions for restricted-substance compliance.
Liens connexes
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