Références fabricant

Vishay SI1427EDH Type P-Channel MOSFET, -2 A, -20 V, 6-Pin SC-70

N° de stock RS:: 256-7340
Référence fabricant:: SI1427EDH-T1-GE3
Fabricant:: Vishay

Vishay SI1427EDH Type P-Channel MOSFET, -2 A, -20 V, 6-Pin SC-70

Sous-total (1 bobine de 3000 unités)*

396,00 €

(TVA exclue)

480,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 30 octobre 2026

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	la bobine*
3000 +	0,132 €	396,00 €

*Prix donné à titre indicatif

N° de stock RS:: 256-7340
Référence fabricant:: SI1427EDH-T1-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-2A
	Maximum Drain Source Voltage Vds	-20V
	Package Type	SC-70
	Series	SI1427EDH
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.165Ω
	Maximum Gate Source Voltage Vgs	8V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2.8W
	Typical Gate Charge Qg @ Vgs	7.6nC
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	+150°C
	Height	1.1mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -2A
	Maximum Drain Source Voltage Vds -20V
	Package Type SC-70
	Series SI1427EDH
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.165Ω
	Maximum Gate Source Voltage Vgs 8V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2.8W
	Typical Gate Charge Qg @ Vgs 7.6nC
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature +150°C
	Height 1.1mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SI1427EDH-T1-GE3

Vishay SI1427EDH Series MOSFET, -20V Maximum Drain Source Voltage, -2A Maximum Continuous Drain Current - SI1427EDH-T1-GE3

This p‑channel MOSFET is a Compact surface‑mount transistor intended for switching and analogue applications in electronic systems. It operates as a P‑channel device with a maximum drain‑source voltage of -20 V, suitable for low‑voltage designs that require controlled current flow and gate‑driven switching performance. The device is aimed at professional applications in automation and electrical systems where board space and thermal endurance are important.

Features and Benefits:

• Low Rds(on) 0.165 Ω for reduced conduction losses • Maximum continuous drain current -2 A supports moderate load currents • Maximum power dissipation 2.8W enables sustained operation under load • Typical gate charge 7.6 nC allows efficient gate‑drive switching • Maximum operating temperature +150 °C for high‑temperature environments • RoHS approved for compliance with hazardous‑substances limits

Applications

• Suitable for high‑temperature power‑management circuitry • Ideal for low‑voltage load switching in automation equipment • Used for polarity protection in battery‑powered systems • Can be used for gate‑driven analogue switching in control modules • Suitable for Compact surface‑mount designs requiring P‑channel devices

What mounting method does it use for PCB assembly?

It is supplied in an SC‑70 package intended for surface mounting, optimised for automated pick‑and‑place assembly processes.

What gate voltage range is permissible for reliable operation?

The device accepts a maximum gate‑source voltage of 8 V

gate drive should remain within this limit to avoid damage.

How does it perform under low forward‑bias conditions?

The specified forward voltage is -1.2 V, indicating the drop expected during conduction in forward‑biased conditions.

What are the environmental temperature limits for storage and use?

The device is specified to operate down to -55 °C and up to +150 °C, covering a wide operational temperature span.

Liens connexes

Soyez le/la premier·ère à être informé de nos nouveautés produits et de nos offres spéciales.

adresse e-mail

Les données personnelles que vous nous fournissez en vous inscrivant à cette liste de diffusion seront traitées conformément à notre politique de confidentialité.