Vishay Type N-Channel MOSFET, 17 A, 200 V, 3-Pin TO-220 IRL640PBF
- N° de stock RS:
- 256-7327
- Référence fabricant:
- IRL640PBF
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
11,76 €
(TVA exclue)
14,23 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 945 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 5 | 2,352 € | 11,76 € |
| 10 - 20 | 2,108 € | 10,54 € |
| 25 - 95 | 2,066 € | 10,33 € |
| 100 - 495 | 1,702 € | 8,51 € |
| 500 + | 1,364 € | 6,82 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 256-7327
- Référence fabricant:
- IRL640PBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.028Ω | |
| Maximum Gate Source Voltage Vgs | ±10 V | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.65mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-40-860 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.028Ω | ||
Maximum Gate Source Voltage Vgs ±10 V | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Maximum Operating Temperature 175°C | ||
Height 4.65mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 304-40-860 | ||
The Vishay Semiconductor third generation power mosfet provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Dynamic dV/dt rating
Repetitive avalanche rated
Logic-level gate drive
Fast switching
Ease of paralleling
Simple drive requirements
Liens connexes
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