Références fabricant

Vishay IRF630 N-Channel Power MOSFET, 5.9 A, 200 V, 3-Pin TO-220AB IRF630PBF

N° de stock RS:: 256-7274
Référence fabricant:: IRF630PBF
Fabricant:: Vishay

Vishay IRF630 N-Channel Power MOSFET, 5.9 A, 200 V, 3-Pin TO-220AB IRF630PBF

Offre groupée disponible

Consulter les options de prix de gros

Sous-total (1 tube de 50 unités)*

37,70 €

(TVA exclue)

45,60 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Dernier stock RS

900 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution

Unité	Prix par unité	le tube*
50 - 50	0,754 €	37,70 €
100 - 450	0,663 €	33,15 €
500 - 4950	0,534 €	26,70 €
5000 +	0,469 €	23,45 €

*Prix donné à titre indicatif

N° de stock RS:: 256-7274
Référence fabricant:: IRF630PBF
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	5.9A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-220AB
	Series	IRF630
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.4Ω
	Forward Voltage Vf	2V
	Maximum Gate Source Voltage Vgs	10V
	Typical Gate Charge Qg @ Vgs	43nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	74W
	Maximum Operating Temperature	+150°C
	Height	4.65mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 5.9A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-220AB
	Series IRF630
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.4Ω
	Forward Voltage Vf 2V
	Maximum Gate Source Voltage Vgs 10V
	Typical Gate Charge Qg @ Vgs 43nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 74W
	Maximum Operating Temperature +150°C
	Height 4.65mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRF630PBF

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Vishay IRF630 Series Power MOSFET, 200V Maximum Drain Source Voltage, 5.9A Maximum Continuous Drain Current - IRF630PBF

This power MOSFET is a semiconductor switch designed for high-voltage power applications, providing controlled conduction in N-channel configurations for through‑hole mounting. It is intended for circuits requiring robust voltage blocking and switching capability across a wide ambient temperature span.

Features and Benefits:

• 200V drain‑source rating enables high‑voltage switching
• 5.9A continuous drain current supports moderate load currents
• 0.4Ω Rds(on) reduces conduction losses during switching
• 74W power dissipation allows substantial thermal handling
• 43nC typical gate charge yields predictable switching behaviour
• 10V gate limit ensures compatibility with common gate drive levels

Applications

• Suitable for power switching in offline converters
• Ideal for amplifier output stage switching duties
• Used with motor‑control drivers in compact assemblies
• Can be used for replacement transistor tasks in TO‑220 designs
• Suitable for industrial power supplies with through‑hole assembly

What thermal range can it withstand during operation?

It operates reliably from -55°C to +150°C, accommodating harsh thermal environments.

How is the device mounted on a PCB or heatsink?

The component uses a TO‑220AB package with three through‑hole pins for soldered board retention and heatsink attachment via the tab.

What is the channel polarity and typical forward voltage?

The device employs an N‑type channel and exhibits a forward voltage of approximately 2V under conduction conditions.

Is it suitable for automotive qualification?

It is not certified to automotive standards but may be used in non‑automotive electronics that do not require those approvals.

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