Vishay IRF630 Type N-Channel Power MOSFET, 5.9 A, 200 V, 3-Pin TO-220AB

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Sous-total (1 tube de 50 unités)*

37,70 €

(TVA exclue)

45,60 €

(TVA incluse)

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  • 1 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité
Prix par unité
le tube*
50 - 500,754 €37,70 €
100 - 4500,663 €33,15 €
500 - 49500,534 €26,70 €
5000 +0,469 €23,45 €

*Prix donné à titre indicatif

N° de stock RS:
256-7274
Référence fabricant:
IRF630PBF
Fabricant:
Vishay
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Marque

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5.9A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-220AB

Series

IRF630

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.4Ω

Maximum Gate Source Voltage Vgs

10V

Forward Voltage Vf

2V

Maximum Power Dissipation Pd

74W

Typical Gate Charge Qg @ Vgs

43nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

+150°C

Standards/Approvals

RoHS

Height

4.65mm

Automotive Standard

No

Vishay IRF630 Series Power MOSFET, 200V Maximum Drain Source Voltage, 5.9A Maximum Continuous Drain Current - IRF630PBF


This power MOSFET is a through-hole N-channel transistor designed for switching and amplification in industrial electronic systems. It operates at high voltage and is suitable for use where substantial power handling and thermal endurance are required. The device is housed in a TO-220AB package and intended for integration into conventional board-mount assemblies.

Features and Benefits:


• 200V drain-source rating enabling high-voltage switching applications • 5.9A continuous drain current for sustained load handling • 0.4Ω Rds(on) reducing conduction losses under load • 74W power dissipation allowing elevated power transfer • 43nC typical gate charge for predictable drive requirements • Rated to +150°C for extended temperature operation

Applications


• Suitable for switch-mode power supplies requiring high-voltage transistors • Ideal for motor-control stages in industrial automation equipment • Used for high-voltage relays and solid-state switching modules • Can be used for prototype and repair in through-hole power designs • Used with discrete amplifier circuits needing substantial power handling

What gate-drive constraints should I consider for switching?


The gate must tolerate up to 10V between gate and source

design the driver to deliver sufficient charge for the typical 43nC gate charge to achieve the desired switching speed.

How should thermal management be approached on this component?


Mount the package on a heatsink or ensure adequate PCB copper and airflow to dissipate up to 74W, and account for the maximum junction rating when calculating thermal resistance.

What mounting and connection format does it require?


It is a through-hole device with three pins in a TO-220AB package compatible with standard through-hole sockets and heatsink attachment methods.

What environmental temperature range is supported during operation?


It is specified for operation down to -55°C and up to +150°C, enabling use across a wide range of ambient conditions.

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