Nexperia Type N-Channel MOSFET, 0.41 A, 50 V Enhancement, 4-Pin LFPAK88
- N° de stock RS:
- 251-7922
- Référence fabricant:
- PSMNR90-50SLHAX
- Fabricant:
- Nexperia
Sous-total (1 bobine de 2000 unités)*
6 506,00 €
(TVA exclue)
7 872,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 30 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2000 + | 3,253 € | 6 506,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 251-7922
- Référence fabricant:
- PSMNR90-50SLHAX
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 0.41A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | LFPAK88 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 112nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 1.7 mm | |
| Height | 8.1mm | |
| Length | 8.1mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 0.41A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type LFPAK88 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 112nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 1.7 mm | ||
Height 8.1mm | ||
Length 8.1mm | ||
Automotive Standard AEC-Q101 | ||
The Nexperia 410 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperias unique SchottkyPlus technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.
Copper-clip and solder die attach for low package inductance and resistance, and high ID(max) rating
Qualified to 175 °C
Avalanche rated, 100 % tested
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
Narrow VGS(th) rating for easy paralleling and improved current sharing
Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions
Liens connexes
- Nexperia N-Channel MOSFET 50 V, 4-Pin LFPAK88 PSMNR90-50SLHAX
- Nexperia N-Channel MOSFET 50 V SOT1235 PSMNR90-50SLH
- Nexperia N-Channel MOSFET 40 V, 4-Pin LFPAK88 PSMNR55-40SSHJ
- Nexperia N-Channel MOSFET 40 V, 4-Pin LFPAK88 BUK7S2R0-40HJ
- Nexperia N-Channel MOSFET 40 V, 5-Pin LFPAK PSMNR90-40YSNX
- Nexperia N-Channel MOSFET 40 V, 5-Pin LFPAK PSMNR90-40YLHX
- Nexperia N-Channel MOSFET 40 V, 4-Pin LFPAK88 BUK7S0R5-40HJ
- Nexperia N-Channel MOSFET 60 V SOT669 BUK9Y22-60ELX
