Infineon IPW Type P-Channel MOSFET, 60 A, 40 V Enhancement, 3-Pin TO-247
- N° de stock RS:
- 250-0597
- Référence fabricant:
- IPW65R060CFD7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 30 unités)*
151,26 €
(TVA exclue)
183,03 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 90 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 30 | 5,042 € | 151,26 € |
| 60 - 120 | 4,79 € | 143,70 € |
| 150 + | 4,588 € | 137,64 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 250-0597
- Référence fabricant:
- IPW65R060CFD7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-247 | |
| Series | IPW | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-247 | ||
Series IPW | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 650V CoolMOS CFD7 extends the voltage class offering of the CFD7 family and is a success or to the 650V CoolMOS CFD2. Resulting from improved switching performance and excellent thermal behaviour. It offers highest efficiency in resonant switching topologies, such as LLC and phase-shift-full-bridge(ZVS). As part of Infineon’s fast body diode portfolio, this new product series blends all advantages of a fast switching technology together with superior hard commutation robustness. The technology meets highest efficiency and reliability standards and furthermore supports high power density solutions.
Excellent hard commutation ruggedness
Extra safety margin for designs with increased bus voltage
Outstanding light load efficiency in industrial SMPS applications
Improved full load efficiency in industrial SMPS applications
Liens connexes
- Infineon N-Channel MOSFET 650 V, 3-Pin TO-247 IPW65R060CFD7XKSA1
- Infineon N-Channel MOSFET 650 V, 3-Pin TO-247 IPW65R099CFD7AXKSA1
- Infineon N-Channel MOSFET 650 V, 3-Pin TO-247 IPW65R115CFD7AXKSA1
- onsemi N-Channel MOSFET 650 V, 3-Pin TO-247 NTHL095N65S3HF
- Infineon CoolMOS CP N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R099CPFKSA1
- Infineon CoolMOS CP N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R125CPFKSA1
- Infineon CoolMOS™ N-Channel MOSFET 650 V, 3-Pin TO-247 IPW65R018CFD7XKSA1
- Infineon CoolMOS CP N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R165CPFKSA1