STMicroelectronics STD N-Channel MOSFET, 80 A, 35 V Enhancement, 3-Pin TO-252 STD80N240K6
- N° de stock RS:
- 249-6745
- Référence fabricant:
- STD80N240K6
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
5,36 €
(TVA exclue)
6,49 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 411 unité(s) expédiée(s) à partir du 21 septembre 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 5,36 € |
| 10 - 99 | 3,58 € |
| 100 - 499 | 2,81 € |
| 500 - 2499 | 2,77 € |
| 2500 + | 2,75 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 249-6745
- Référence fabricant:
- STD80N240K6
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 35V | |
| Package Type | TO-252 | |
| Series | STD | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.01mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Power Dissipation Pd | 70W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | UL | |
| Width | 6.6mm | |
| Length | 10.1mm | |
| Height | 2.4mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 35V | ||
Package Type TO-252 | ||
Series STD | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.01mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Power Dissipation Pd 70W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals UL | ||
Width 6.6mm | ||
Length 10.1mm | ||
Height 2.4mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics is very high voltage N-channel Power MOSFET is designed using the ultimate mesh K6 technology based on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Worldwide best RDS(on) x area
Worldwide best FOM (figure of merit)
Ultra low gate charge
100% avalanche tested
Zener-protected
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