Wolfspeed Type N-Channel MOSFET, 10.7 A, 1200 V Enhancement, 4-Pin TO-247 C3M0021120K

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N° de stock RS:
248-8925
Référence fabricant:
C3M0021120K
Fabricant:
Wolfspeed
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Marque

Wolfspeed

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10.7A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

21mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

162nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

15 V

Maximum Power Dissipation Pd

469W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

23.63mm

Height

5.21mm

Width

16.13 mm

Standards/Approvals

No

Automotive Standard

No

The Wolfspeed Silicon Carbide Power MOSFET C3MTM MOSFET Technology is in N-Channel Enhancement Mode. The Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs is a range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency

3rd generation SiC MOSFET technology

Low impedance package with driver source pin

8mm of creepage distance between drain and source

High blocking voltage with low on-resistance

High-speed switching with low capacitances

Fast intrinsic diode with low reverse recovery (Qrr)

Halogen free, RoHS compliant

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