Infineon IPD N-Channel MOSFET, 180 A, 75 V N, 3-Pin TO-252 IPD050N10N5ATMA1
- N° de stock RS:
- 244-8543
- Référence fabricant:
- IPD050N10N5ATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 2500 unités)*
2 710,00 €
(TVA exclue)
3 280,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 22 février 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 1,084 € | 2 710,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 244-8543
- Référence fabricant:
- IPD050N10N5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 75V Maximum Drain Source Voltage, 180A Maximum Continuous Drain Current - IPD050N10N5ATMA1
This MOSFET is a surface-mount N-channel power transistor designed for high-current switching in demanding environments, offering wide operating-temperature tolerance and adherence to industry environmental standards.
Features and Benefits:
• 75 V maximum drain-source voltage enables moderate-voltage switching
• 180 A continuous drain current supports high-current applications
• 3 mΩ low on-resistance minimises conduction losses
• 81 W power dissipation allows sustained thermal load handling
• 80 nC typical gate charge enables predictable gate-drive requirements
• 20 V maximum gate-source rating accommodates robust gate drive
• 180 A continuous drain current supports high-current applications
• 3 mΩ low on-resistance minimises conduction losses
• 81 W power dissipation allows sustained thermal load handling
• 80 nC typical gate charge enables predictable gate-drive requirements
• 20 V maximum gate-source rating accommodates robust gate drive
Applications
• Suitable for automotive power distribution units
• Ideal for DC-DC converters in industrial equipment
• Used for motor drive stages requiring high current
• Can be used for battery management and protection
• Used with power switching arrays on surface-mount assemblies
• Ideal for DC-DC converters in industrial equipment
• Used for motor drive stages requiring high current
• Can be used for battery management and protection
• Used with power switching arrays on surface-mount assemblies
What temperature range can it operate within?
It functions across an extended range from -55 °C to 175 °C, supporting harsh thermal conditions.
How does the package influence mounting and thermal performance?
The TO-252 surface-mount package provides a Compact board footprint and facilitates heat transfer to the PCB for thermal management.
What diode characteristic is relevant for forward conduction?
The intrinsic diode exhibits a forward voltage of approximately 1.3 V during conduction events.
Is it suitable for applications with environmental material restrictions?
It complies with RoHS requirements, meeting restrictions on certain hazardous substances.
What channel orientation and mode does it use?
It employs an N-type channel operating in enhancement mode for standard power-switching behaviour.
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