Infineon CoolSiC Type N-Channel MOSFET, 52 A, 75 V, 3-Pin TO-247

Sous-total (1 tube de 240 unités)*

3 086,16 €

(TVA exclue)

3 734,16 €

(TVA incluse)

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  • Plus 480 unité(s) expédiée(s) à partir du 29 décembre 2025
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Unité
Prix par unité
le tube*
240 +12,859 €3 086,16 €

*Prix donné à titre indicatif

N° de stock RS:
244-2909
Référence fabricant:
AIMW120R045M1XKSA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

52A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-247

Series

CoolSiC

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

57nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

5.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

16.3mm

Width

21.5 mm

Height

5.3mm

Automotive Standard

AEC-Q101

The Infineon AIMW120R045M1XKSA1 is specifically designed to meet the high requirements demanded by the automotive industry with regards to reliability, quality and performance. The increase of switching frequency for a converter using CoolSiC™ MOSFETs can result in dramatically reduced volume and weight of the magnetic components by up to 25%, which yields to significant cost increase of the application itself. The gain in performance fulfills new regulation standards in terms of higher efficiency requirements for electric vehicles.

Revolutionary semiconductor material - Silicon Carbide  Very low switching losses

Threshold-free on state characteristic  IGBT-compatible driving voltage (15V for turn-on)

0V turn-off gate voltage

Benchmark gate threshold voltage, VGS(th)=4.5V

Fully controllable dv/dt

Commutation robust body diode, ready for synchronous rectification Temperature independent turn-off switching losses

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