Infineon BSZ N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSZ065N06LS5ATMA1

Sous-total (1 bobine de 5000 unités)*

2 280,00 €

(TVA exclue)

2 760,00 €

(TVA incluse)

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Temporairement en rupture de stock
  • 5 000 unité(s) expédiée(s) à partir du 07 octobre 2027
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Prix par unité
la bobine*
5000 +0,456 €2 280,00 €

*Prix donné à titre indicatif

N° de stock RS:
244-1567
Référence fabricant:
BSZ065N06LS5ATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

212A

Maximum Drain Source Voltage Vds

40V

Series

BSZ

Package Type

SuperSO8 5 x 6

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

+150°C

Standards/Approvals

RoHS

Automotive Standard

No

Infineon BSZ Series MOSFET, 40V Maximum Drain Source Voltage, 212A Maximum Continuous Drain Current - BSZ065N06LS5ATMA1


This MOSFET is a high-current N-channel switching device designed for surface-mount power management in demanding electronic systems. It operates across a wide temperature range and is intended for applications requiring substantial continuous drain current and efficient conduction with low forward voltage.

Features and Benefits:


• 212A continuous drain current delivers sustained high-current capability
• 0.7mΩ Rds(on) minimises conduction losses for improved efficiency
• 81W maximum power dissipation supports elevated thermal loads
• 1.2V forward voltage reduces voltage drop under load
• 80nC typical gate charge enables fast switching performance
• 20V maximum gate-source rating protects gate from overvoltage

Applications


• Suitable for high-current DC-DC converters in power stages
• Ideal for motor drive half-bridge and H-bridge designs
• Used for battery protection and power distribution modules
• Can be used for synchronous rectification in power supplies
• Applicable to high-power switching in industrial control units

What thermal range can this device tolerate in operation?


It functions from −55°C up to +150°C enabling use in harsh temperature environments.

How is the component packaged for PCB assembly?


It comes in an 8-pin SuperSO8 5x6 surface-mount package for Compact board mounting.

What gate-drive considerations are needed for switching?


Drive circuitry must provide adequate charge for the typical 80nC gate charge to achieve the intended switching speed and respect the 20V maximum Vgs limit.

What type of channel conduction does it provide?


It is an N-channel device designed for enhanced current flow in low-side or high-side switching topologies.

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