Infineon BSZ N-Channel MOSFET, 212 A, 60 V N, 8-Pin SuperSO8 5 x 6 BSZ040N06LS5ATMA1
- N° de stock RS:
- 241-9681
- Référence fabricant:
- BSZ040N06LS5ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
10,50 €
(TVA exclue)
12,70 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 6 860 unité(s) expédiée(s) à partir du 21 septembre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 2,10 € | 10,50 € |
| 50 - 120 | 1,91 € | 9,55 € |
| 125 - 245 | 1,784 € | 8,92 € |
| 250 - 495 | 1,658 € | 8,29 € |
| 500 + | 1,534 € | 7,67 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 241-9681
- Référence fabricant:
- BSZ040N06LS5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SuperSO8 5 x 6 | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 5 N-channel power MOSFET has 60 V drain source voltage (VDS) & 101 A drain current (ID). It's logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.
Optimized for high performance SMPS ,e.g. sync. rec.
100% avalanche tested
Superior thermal resistance
N-channel
Qualified according to JEDEC1) for target applications
Pb-free lead plating
RoHScompliant
Halogen-free according to IEC61249-2-21
Liens connexes
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