Nexperia Type N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK88 PSMNR55-40SSHJ
- N° de stock RS:
- 243-4877
- Référence fabricant:
- PSMNR55-40SSHJ
- Fabricant:
- Nexperia
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
11,32 €
(TVA exclue)
13,70 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 1 580 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 48 | 5,66 € | 11,32 € |
| 50 - 98 | 5,105 € | 10,21 € |
| 100 - 248 | 4,175 € | 8,35 € |
| 250 + | 4,10 € | 8,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 243-4877
- Référence fabricant:
- PSMNR55-40SSHJ
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | LFPAK88 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type LFPAK88 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Nexperia N-channel enhancement mode MOSFET in LFPAK88 package having 500 Amp continuous current, standard level gate drive. Next Power S3 family using Nexperia’s unique “Schottky Plus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. Next Power S3 is particularly suited to high efficiency applications at high switching frequencies, and also safe and reliable switching at high load-current.
Copper-clip and solder die attach for low package inductance and resistance, and high ID (max) rating
Ideal replacement for D2PAK and 10 x 12 mm leadless package types
Qualified to 175 °C
Meets UL2595 requirements for creepage and clearance
Avalanche rated, 100 % tested
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
Brushless DC motor control
Synchronous rectifier in high-power AC-to-DC applications, e.g. server power supplies
Battery protection and Battery Management Systems (BMS)
eFuse and load switch
Hotswap / in-rush current management
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