Infineon IPA Type N-Channel MOSFET, 84 A, 40 V N, 3-Pin TO-220 IPA80R1K2P7XKSA1
- N° de stock RS:
- 242-0986
- Référence fabricant:
- IPA80R1K2P7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
3,14 €
(TVA exclue)
3,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 414 unité(s) expédiée(s) à partir du 27 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 1,57 € | 3,14 € |
| 20 - 48 | 1,415 € | 2,83 € |
| 50 - 98 | 1,34 € | 2,68 € |
| 100 - 198 | 1,24 € | 2,48 € |
| 200 + | 1,145 € | 2,29 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 242-0986
- Référence fabricant:
- IPA80R1K2P7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 84A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-220 | |
| Series | IPA | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 84A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-220 | ||
Series IPA | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon N-channel MOSFET provide a maximum continous drain current is 4.5 A and drain source voltage is 800 V. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. The operating temperature of MOSFET is ranges from -55 °C to 150 °C.
Best-in-class performance.
Enabling higher power density designs
BOM savings and lower assembly costs
Easy to drive and to parallel
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Easy to select right parts for fine tuning of designs
Liens connexes
- Infineon IPA Type N-Channel MOSFET 40 V N, 3-Pin TO-220
- Infineon IPA Type N-Channel MOSFET 40 V N, 3-Pin TO-220 IPA60R180P7XKSA1
- Infineon IPA Type N-Channel MOSFET 40 V P, 3-Pin TO-220
- Infineon IPA Type N-Channel MOSFET 40 V P, 3-Pin TO-220 IPA80R280P7XKSA1
- Infineon IPA Type N-Channel MOSFET 40 V P, 3-Pin TO-220 IPA029N06NXKSA1
- Infineon IPA Type N-Channel MOSFET, 14.1 A N TO-220
- Infineon IPA Type N-Channel MOSFET, 10.1 A N TO-220
- Infineon IPA Type N-Channel MOSFET, 9.9 A N TO-220
