Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSZ075N08NS5ATMA1
- N° de stock RS:
- 241-9683
- Référence fabricant:
- BSZ075N08NS5ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
6,37 €
(TVA exclue)
7,71 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 14 955 unité(s) expédiée(s) à partir du 19 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,274 € | 6,37 € |
| 50 - 120 | 1,148 € | 5,74 € |
| 125 - 245 | 1,07 € | 5,35 € |
| 250 - 495 | 0,994 € | 4,97 € |
| 500 + | 0,93 € | 4,65 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 241-9683
- Référence fabricant:
- BSZ075N08NS5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSZ | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSZ | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 5 N-channel MOSFET has 80 V drain source voltage (VDS) & 73 A drain current (ID). It offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. regulator, etc. It is especially designed for synchronous rectification in telecom and server power supplies. In addition, it can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
Ideal for high frequency switching and sync. rec.
Optimized technology for DC/DCconverters
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
100% avalanche tested
N-channel, normal level
Qualified according to JEDEC1) for target applications
Pb-free lead plating
RoHS compliant
Halogen-free according to IEC61249-2-21
Higher solder joint reliability with enlarged source interconnection
Liens connexes
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