Infineon BSC Type N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC146N10LS5ATMA1
- N° de stock RS:
- 241-9677
- Référence fabricant:
- BSC146N10LS5ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
4,83 €
(TVA exclue)
5,845 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 3 465 unité(s) expédiée(s) à partir du 12 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 0,966 € | 4,83 € |
| 50 - 120 | 0,774 € | 3,87 € |
| 125 - 245 | 0,728 € | 3,64 € |
| 250 - 495 | 0,678 € | 3,39 € |
| 500 + | 0,63 € | 3,15 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 241-9677
- Référence fabricant:
- BSC146N10LS5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSC | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSC | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 5 N-channel logic level power MOSFET has 100 V drain source voltage (VDS) & 44 A drain current (ID). The power MOSFETs in logic level are highly suitable for charging, adapter and telecom applications. The device’s low gate charge reduces switching losses without compromising conduction losses. Logic level MOSFETs allow operations at high switching frequencies and due to a low gate threshold voltage can be driven directly from microcontrollers.
Optimized for high performance SMPS ,e.g. sync. rec.
100% avalanche tested
Superior thermal resistance
N-channel, logic level
Pb-free lead plating
RoHScompliant
Halogen-free according to IEC61249-2-21
Liens connexes
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