Vishay SiR Type N-Channel MOSFET, 171 A, 171 V, 8-Pin PowerPAK SO-8 SiRS700DP-T1-GE3

Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
239-5395
Référence fabricant:
SiRS700DP-T1-GE3
Fabricant:
Vishay
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Marque

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

171A

Maximum Drain Source Voltage Vds

171V

Package Type

PowerPAK SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0035Ω

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

132W

Typical Gate Charge Qg @ Vgs

86nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6mm

Standards/Approvals

RoHS

Width

5 mm

Automotive Standard

No

The Vishay TrenchFET N channel power MOSFET has drain current of 171 A. It is used in synchronous rectification, primary side switch, DC/DC converter and motor drive switch.

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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