Infineon OptiMOS™ N-Channel MOSFET, 479 A, 25 V, 8-Pin TDSON BSC004NE2LS5ATMA1
- N° de stock RS:
- 236-3641
- Référence fabricant:
- BSC004NE2LS5ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
19,75 €
(TVA exclue)
23,90 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 3,95 € | 19,75 € |
| 50 - 120 | 3,48 € | 17,40 € |
| 125 - 245 | 3,24 € | 16,20 € |
| 250 - 495 | 3,044 € | 15,22 € |
| 500 + | 2,81 € | 14,05 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 236-3641
- Référence fabricant:
- BSC004NE2LS5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 479A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | OptiMOS™ | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.45mΩ | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 135nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 188W | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.35mm | |
| Standards/Approvals | No | |
| Length | 5.49mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 479A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series OptiMOS™ | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.45mΩ | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 135nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 188W | ||
Maximum Operating Temperature 175°C | ||
Width 6.35mm | ||
Standards/Approvals No | ||
Length 5.49mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
Infineon OptiMOS™ Series MOSFET, 25V Maximum Drain Source Voltage, 479A Maximum Continuous Drain Current - BSC004NE2LS5ATMA1
This MOSFET is a high-current N-channel semiconductor designed for surface-mount power switching in demanding thermal environments. It operates across an extended temperature range and is intended for applications requiring substantial continuous drain current and low conduction losses while mounted in a TDSON package.
Features and Benefits:
• 479A continuous drain current reduces conduction constraints for high loads
• 0.45mΩ maximum RDS(on) lowers on-state energy dissipation
• 25V maximum drain-source voltage permits low-voltage power stages
• 188W maximum power dissipation supports elevated thermal loading
• 135nC typical gate charge enables controlled switching for gate-drive design
• 20V maximum gate-source voltage allows robust gate-drive margins
• 0.45mΩ maximum RDS(on) lowers on-state energy dissipation
• 25V maximum drain-source voltage permits low-voltage power stages
• 188W maximum power dissipation supports elevated thermal loading
• 135nC typical gate charge enables controlled switching for gate-drive design
• 20V maximum gate-source voltage allows robust gate-drive margins
Applications
• Suitable for high-current DC power distribution modules
• Ideal for synchronous rectification in low-voltage converters
• Used with motor inverter stages requiring high Peak currents
• Can be used for battery management and high-power cells
• Used for power stages in telecommunications rectifiers
• Ideal for synchronous rectification in low-voltage converters
• Used with motor inverter stages requiring high Peak currents
• Can be used for battery management and high-power cells
• Used for power stages in telecommunications rectifiers
What ambient temperatures can it withstand?
It is specified to operate from −55°C up to 175°C.
What package and mounting style does it use?
It is supplied in a TDSON package for surface mounting.
How does its gate-drive requirement affect design?
The 135nC gate charge requires a driver sized for higher charge transfer to meet desired switching speed and losses.
What polarity of channel does it employ and how does that affect usage?
It uses an N-channel topology, which is suited to low-side switching and synchronous rectifier configurations.
What voltage and current limits should be observed during design?
Design should respect a maximum drain-source voltage of 25V and a maximum continuous drain current of 479A.
Liens connexes
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