Infineon ISP Type P-Channel MOSFET, 1.29 A, 150 V Enhancement, 3-Pin SOT-223 ISP14EP15LMXTSA1

Sous-total (1 bobine de 1000 unités)*

148,00 €

(TVA exclue)

179,00 €

(TVA incluse)

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  • Expédition à partir du 26 mai 2026
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Prix par unité
la bobine*
1000 +0,148 €148,00 €

*Prix donné à titre indicatif

N° de stock RS:
235-4874
Référence fabricant:
ISP14EP15LMXTSA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

1.29A

Maximum Drain Source Voltage Vds

150V

Package Type

SOT-223

Series

ISP

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.38Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

11.6nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

5W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

6.1mm

Standards/Approvals

No

Width

1.2 mm

Height

5.35mm

Automotive Standard

No

The Infineon OptiMOS™ P-Channel MOSFETs 150V in SOT-223 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-Channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.

Ideal for high and low switching frequency

Avalanche ruggedness

Industry standard footprint surface mount package

Robust, reliable performance

Increased security of supply

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