ROHM Type N-Channel MOSFET, 70 A, 600 V Enhancement, 3-Pin R6070JNZ4C13
- N° de stock RS:
- 235-2679
- Référence fabricant:
- R6070JNZ4C13
- Fabricant:
- ROHM
Sous-total (1 unité)*
7,57 €
(TVA exclue)
9,16 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 17 unité(s) expédiée(s) à partir du 02 mars 2026
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Unité | Prix par unité |
|---|---|
| 1 + | 7,57 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 235-2679
- Référence fabricant:
- R6070JNZ4C13
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 770W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 165nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.71 mm | |
| Standards/Approvals | No | |
| Height | 21.25mm | |
| Length | 16.24mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 600V | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 770W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 165nC | ||
Maximum Operating Temperature 150°C | ||
Width 2.71 mm | ||
Standards/Approvals No | ||
Height 21.25mm | ||
Length 16.24mm | ||
Automotive Standard No | ||
The ROHM PrestoMOS series power MOSFET with fast reverse recovery time , suitable for the switching applications. It increases design flexibility while maintaining the industrys fastest reverse recovery time optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air conditioners.
Low on-resistance
Fast switching speed
Drive circuits can be simple
Pb-free plating
RoHS compliant
Liens connexes
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