ROHM QH8MC5 Type N, Type P-Channel MOSFET, 3.5 A, 60 V Enhancement, 8-Pin TSMT-8 QH8MC5TCR
- N° de stock RS:
- 235-2674
- Référence fabricant:
- QH8MC5TCR
- Fabricant:
- ROHM
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
7,31 €
(TVA exclue)
8,85 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 20 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 0,731 € | 7,31 € |
| 50 - 90 | 0,715 € | 7,15 € |
| 100 - 240 | 0,565 € | 5,65 € |
| 250 - 990 | 0,44 € | 4,40 € |
| 1000 + | 0,43 € | 4,30 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 235-2674
- Référence fabricant:
- QH8MC5TCR
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Type N, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | QH8MC5 | |
| Package Type | TSMT-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 91mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.5W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.1mm | |
| Standards/Approvals | No | |
| Width | 0.85 mm | |
| Height | 2.9mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Type N, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series QH8MC5 | ||
Package Type TSMT-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 91mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.5W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.1mm | ||
Standards/Approvals No | ||
Width 0.85 mm | ||
Height 2.9mm | ||
Automotive Standard No | ||
The ROHM dual N channel and P channel MOSFET which supports 60V withstand voltage. This is designed for 24V input equipment's such as factory automation equipment's, and motors mounted on base stations. By combining the optimum N channel + P channel, reduces the design efforts. It also contributes to lower power consumption of equipment.
Low on-resistance
Small surface mount package
Pb-free lead plating
RoHS compliant
Halogen Free
Liens connexes
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