Infineon BSC Type N-Channel MOSFET, 44 A, 100 V Enhancement, 8-Pin SuperSO8 5 x 6 BSC0803LSATMA1
- N° de stock RS:
- 235-0604
- Référence fabricant:
- BSC0803LSATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
7,35 €
(TVA exclue)
8,90 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 3 745 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,47 € | 7,35 € |
| 50 - 120 | 1,264 € | 6,32 € |
| 125 - 245 | 1,176 € | 5,88 € |
| 250 - 495 | 1,088 € | 5,44 € |
| 500 + | 0,808 € | 4,04 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 235-0604
- Référence fabricant:
- BSC0803LSATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | BSC | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.6nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 52W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.35 mm | |
| Length | 5.49mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series BSC | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.6nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 52W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 6.35 mm | ||
Length 5.49mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Infineon OptiMOSTM5 power transistor operated on 100V and drain current of 4A.The OptiMOSTM5 Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp up and optimized lead times. OptiMOS™ low voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.
Optimized for high performance SMPS
100% avalanche tested
Superior thermal resistance
N-channel, logic level
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-21
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