Renesas Electronics Type N-Channel MOSFET, 4 A, 1500 V Enhancement, 3-Pin TO-3PN 2SK1835-E
- N° de stock RS:
- 234-7061
- Référence fabricant:
- 2SK1835-E
- Fabricant:
- Renesas Electronics
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 234-7061
- Référence fabricant:
- 2SK1835-E
- Fabricant:
- Renesas Electronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Renesas Electronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 1500V | |
| Package Type | TO-3PN | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.6Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 5mm | |
| Length | 15.9mm | |
| Width | 20.1 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Renesas Electronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 1500V | ||
Package Type TO-3PN | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.6Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 5mm | ||
Length 15.9mm | ||
Width 20.1 mm | ||
Automotive Standard No | ||
The Renesas Electronics silicon N-channel MOSFET suitable for switching and load switch applications. It has high breakdown voltage of 1500 V. It is also suitable for switching regulator.
Low on-resistance
High-speed switching
High-robustness
Low drive current
No secondary breakdown
Liens connexes
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