Infineon ISC Type N-Channel MOSFET, 63 A, 40 V, 8-Pin TDSON-8 FL ISC058N04NM5ATMA1
- N° de stock RS:
- 234-7006
- Référence fabricant:
- ISC058N04NM5ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
4,00 €
(TVA exclue)
4,85 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 4 495 unité(s) expédiée(s) à partir du 16 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 0,80 € | 4,00 € |
| 50 - 120 | 0,718 € | 3,59 € |
| 125 - 245 | 0,672 € | 3,36 € |
| 250 - 495 | 0,624 € | 3,12 € |
| 500 + | 0,584 € | 2,92 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 234-7006
- Référence fabricant:
- ISC058N04NM5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON-8 FL | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Maximum Power Dissipation Pd | 42W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.8mm | |
| Width | 1.1 mm | |
| Height | 4.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON-8 FL | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Maximum Power Dissipation Pd 42W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Operating Temperature 175°C | ||
Length 3.8mm | ||
Width 1.1 mm | ||
Height 4.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 power transistor N-channel MOSFET has 40V drain source breakdown voltage and 63A continuous drain current. This product offers a Benchmark solution for applications requiring normal level (higher threshold voltage) drive capability. The high Vth in the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGS ratios reduce the Peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on.
Battery powered application
LV motor drives
Very low on-resistanceRDS(on)
100% avalanche tested
175°C junction temperature
Superior thermal resistance
Low gate charge
Reduced switching losses
Suitable for operation at higher frequencies
N-channel
Pb-free lead plating
RoHS compliant
Halogen-free according to IEC61249-2-21
Liens connexes
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC058N04NM5ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC028N04NM5ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC046N04NM5ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC017N04NM5ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC019N04NM5ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC036N04NM5ATMA1
- Infineon ISC Type N-Channel OptiMOST Power-MOSFET 30 V Enhancement, 8-Pin PG-TDSON-8
- Infineon ISC Type N-Channel OptiMOST Power-MOSFET 30 V Enhancement, 8-Pin PG-TDSON-8 ISC045N03L5SATMA1