Infineon IPTG Type N-Channel MOSFET, 77 A, 250 V Enhancement, 8-Pin HSOG IPTG210N25NM3FDATMA1
- N° de stock RS:
- 233-4391
- Référence fabricant:
- IPTG210N25NM3FDATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
13,70 €
(TVA exclue)
16,58 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 1 800 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 6,85 € | 13,70 € |
| 10 - 18 | 6,17 € | 12,34 € |
| 20 - 48 | 5,755 € | 11,51 € |
| 50 - 98 | 5,405 € | 10,81 € |
| 100 + | 5,005 € | 10,01 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 233-4391
- Référence fabricant:
- IPTG210N25NM3FDATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 77A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | IPTG | |
| Package Type | HSOG | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 8.75 mm | |
| Length | 10.1mm | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 77A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series IPTG | ||
Package Type HSOG | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 8.75 mm | ||
Length 10.1mm | ||
Height 2.4mm | ||
Automotive Standard No | ||
The Infineon OptiMOS power MOSFET IPTG210N25NM3FD comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 3 - 250 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board.
High efficiency and lower EMI
High performance capability
Liens connexes
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