Infineon IPTC Type N-Channel MOSFET, 279 A, 100 V Enhancement, 16-Pin HDSOP IPTC019N10NM5ATMA1
- N° de stock RS:
- 233-4380
- Référence fabricant:
- IPTC019N10NM5ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
12,36 €
(TVA exclue)
14,96 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 1 542 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 6,18 € | 12,36 € |
| 20 - 48 | 5,50 € | 11,00 € |
| 50 - 98 | 5,13 € | 10,26 € |
| 100 - 198 | 4,76 € | 9,52 € |
| 200 + | 4,45 € | 8,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 233-4380
- Référence fabricant:
- IPTC019N10NM5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 279A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPTC | |
| Package Type | HDSOP | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 128nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.1mm | |
| Height | 2.35mm | |
| Width | 10.3 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 279A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPTC | ||
Package Type HDSOP | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 128nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.1mm | ||
Height 2.35mm | ||
Width 10.3 mm | ||
Automotive Standard No | ||
The Infineon IPTC019N10NM5 is part of OptiMOS 5 power MOSFET in TOLT in that TO-Leaded top side-cooling package for superior thermal performance. This innovative package combined with the key features of OptiMOS 5 technology allows best-in-class products in 100 V as well as high current rating 300 A for high power density designs. With top side-cooling setup the drain is exposed at the surface of the package and 95 percent of the heat dissipation can be promoted directly to the heatsink achieving 20 percent better RthJA and 50 percent improved RthJC compared to TOLL package. With bottom side cooling packages like TOLL or D2PAK, the heat is dissipated via the PCB to the heatsink causing high power losses.
Negative stand-off
Saving in cooling system
Increased system efficiency enabling extended battery life time
Liens connexes
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