onsemi SUPERFET V Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247
- N° de stock RS:
- 230-9088
- Référence fabricant:
- NTHL099N60S5
- Fabricant:
- onsemi
Sous-total (1 tube de 450 unités)*
1 409,40 €
(TVA exclue)
1 705,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 28 mai 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 450 + | 3,132 € | 1 409,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 230-9088
- Référence fabricant:
- NTHL099N60S5
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | SUPERFET V | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 184W | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Height | 41.07mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series SUPERFET V | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 184W | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Height 41.07mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor series SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns and high body diode dVDS/dt ratings at 50 V/ns. Consequently, the SUPERFET V MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use for both hard and soft switching topologies. It helps manage EMI issues and allows for easier design implementation with excellent system efficiency.
Ultra Low Gate Charge (Typ. Qg= 48 nC)
Low switching loss
Low Time Related Output Capacitance (Typ. Coss(tr.)= 642 pF)
Low switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
650 V @ TJ = 150°C
Typ. RDS(on) = 79.2 m Ω
100% Avalanche Tested
RoHS Compliant
Internal Gate Resistance: 6.9 Ω
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