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Sélectionner tout	Attribut	Valeur
	Marque	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-247
	Series	SUPERFET V
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	99mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	184W
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	48nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	15.87mm
	Width	4.82 mm
	Height	41.07mm
	Automotive Standard	No

	Sélectionner tout
	Marque onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-247
	Series SUPERFET V
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 99mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 184W
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 48nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 15.87mm
	Width 4.82 mm
	Height 41.07mm
	Automotive Standard No

The ON Semiconductor series SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns and high body diode dVDS/dt ratings at 50 V/ns. Consequently, the SUPERFET V MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use for both hard and soft switching topologies. It helps manage EMI issues and allows for easier design implementation with excellent system efficiency.

Ultra Low Gate Charge (Typ. Qg= 48 nC)

Low switching loss

Low Time Related Output Capacitance (Typ. Coss(tr.)= 642 pF)

Low switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

650 V @ TJ = 150°C

Typ. RDS(on) = 79.2 m Ω

100% Avalanche Tested

RoHS Compliant

Internal Gate Resistance: 6.9 Ω

onsemi SUPERFET V Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247

Frais de livraison offerts pour toute commande de plus de 75,00 €

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