onsemi SUPERFET III Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin H-PSOF
- N° de stock RS:
- 230-9082
- Référence fabricant:
- NTBL082N65S3HF
- Fabricant:
- onsemi
Sous-total (1 bobine de 2000 unités)*
8 472,00 €
(TVA exclue)
10 252,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 2 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2000 + | 4,236 € | 8 472,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 230-9082
- Référence fabricant:
- NTBL082N65S3HF
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H-PSOF | |
| Series | SUPERFET III | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 313W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Standards/Approvals | Pb-Free Halide free non AEC-Q and PPAP | |
| Width | 2.4 mm | |
| Height | 13.28mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H-PSOF | ||
Series SUPERFET III | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 313W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Standards/Approvals Pb-Free Halide free non AEC-Q and PPAP | ||
Width 2.4 mm | ||
Height 13.28mm | ||
Automotive Standard No | ||
The ON Semiconductor series SUPERFET III MOSFET is ON Semiconductors brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency.
High power density
Kelvin Source Configuration
Low gate noise and switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Moisture Sensitivity Level 1 guarantee
High reliability in humid ambient condition
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