onsemi SUPERFET III Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin H-PSOF

Sous-total (1 bobine de 2000 unités)*

8 472,00 €

(TVA exclue)

10 252,00 €

(TVA incluse)

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Dernier stock RS
  • 2 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
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Prix par unité
la bobine*
2000 +4,236 €8 472,00 €

*Prix donné à titre indicatif

N° de stock RS:
230-9082
Référence fabricant:
NTBL082N65S3HF
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

650V

Package Type

H-PSOF

Series

SUPERFET III

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

82mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

313W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

79nC

Maximum Operating Temperature

175°C

Length

10.2mm

Standards/Approvals

Pb-Free Halide free non AEC-Q and PPAP

Width

2.4 mm

Height

13.28mm

Automotive Standard

No

The ON Semiconductor series SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency.

High power density

Kelvin Source Configuration

Low gate noise and switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Moisture Sensitivity Level 1 guarantee

High reliability in humid ambient condition

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