Infineon IPT60R Type N-Channel MOSFET, 29 A, 600 V Enhancement, 8-Pin HSOF IPT60R080G7XTMA1
- N° de stock RS:
- 222-4940
- Référence fabricant:
- IPT60R080G7XTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
14,71 €
(TVA exclue)
17,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 18 janvier 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 7,355 € | 14,71 € |
| 10 - 18 | 6,33 € | 12,66 € |
| 20 - 48 | 5,88 € | 11,76 € |
| 50 - 98 | 5,52 € | 11,04 € |
| 100 + | 5,08 € | 10,16 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4940
- Référence fabricant:
- IPT60R080G7XTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | HSOF | |
| Series | IPT60R | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 167W | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.4mm | |
| Width | 10.58mm | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type HSOF | ||
Series IPT60R | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 167W | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.4mm | ||
Width 10.58mm | ||
Length 10.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.
Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G
Enables best-in-class R DS(on) in smallest footprint
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