Infineon IPD50R Type N-Channel MOSFET, 40 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R060CFD7AUMA1
- N° de stock RS:
- 222-4907
- Référence fabricant:
- IPL60R060CFD7AUMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
13,46 €
(TVA exclue)
16,28 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 26 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 6,73 € | 13,46 € |
| 10 - 18 | 5,99 € | 11,98 € |
| 20 - 48 | 5,66 € | 11,32 € |
| 50 - 98 | 5,255 € | 10,51 € |
| 100 + | 4,845 € | 9,69 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4907
- Référence fabricant:
- IPL60R060CFD7AUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | ThinPAK | |
| Series | IPD50R | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 219W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 8.1mm | |
| Standards/Approvals | No | |
| Width | 8.1 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type ThinPAK | ||
Series IPD50R | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 219W | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 8.1mm | ||
Standards/Approvals No | ||
Width 8.1 mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Best-in-class hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use/performance trade-off
Enabling increased power density solutions
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