Infineon CoolMOS Type N-Channel MOSFET, 90 A, 80 V Enhancement, 3-Pin TO-252 IPD90N08S405ATMA1
- N° de stock RS:
- 222-4679
- Référence fabricant:
- IPD90N08S405ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
6,84 €
(TVA exclue)
8,275 €
(TVA incluse)
Ajouter 60 unités pour bénéficier d'une livraison gratuite
En stock
- 12 395 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,368 € | 6,84 € |
| 50 - 120 | 1,30 € | 6,50 € |
| 125 - 245 | 1,272 € | 6,36 € |
| 250 - 495 | 1,178 € | 5,89 € |
| 500 + | 1,094 € | 5,47 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4679
- Référence fabricant:
- IPD90N08S405ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-252 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 144W | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22 mm | |
| Height | 2.3mm | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-252 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 144W | ||
Maximum Operating Temperature 175°C | ||
Width 6.22 mm | ||
Height 2.3mm | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications
Liens connexes
- Infineon CoolMOS Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD90N06S404ATMA2
- Infineon CoolMOS Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-252 IPD80R2K8CEATMA1
- Infineon IPD053N08N3 G Type N-Channel MOSFET 80 V Enhancement, 5-Pin TO-252
- Infineon IPD053N08N3 G Type N-Channel MOSFET 80 V Enhancement, 5-Pin TO-252 IPD053N08N3GATMA1
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252